Product Summary
The APT30GP60BG is a power MOS 7 IGBT. A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch mode power supplies and tail current sensitive applications. In many cases, the POWER MOS 7® IGBT provides a lower cost alternative to a Power MOSFET.
Parametrics
APT30GP60BG absolute maximum ratings: (1)Collector-Emitter Voltage: 600V; (2)Gate-Emitter Voltage: ±20V; (3)Gate-Emitter Voltage Transient: ±30V; (4)Continuous Collector Current @ TC = 25℃: 100A; (5)Continuous Collector Current @ TC = 110℃: 49A; (6)Pulsed Collector Current 1 @ TC = 25℃: 120A; (7)Switching Safe Operating Area @ TJ = 150℃: 120A@600V; (8)Total Power Dissipation: 463W; (9)Operating and Storage Junction Temperature Range: -55 to 150℃; (10)Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec: 300℃.
Features
APT30GP60BG features: (1)Low Conduction Loss ; (2)100 kHz operation @ 400V, 37A; (3)Low Gate Charge ; (4)200 kHz operation @ 400V, 24A; (5)Ultrafast Tail Current shutoff ; (6)SSOA rated.
Diagrams
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APT30GP60BG |
IGBT 600V 100A 463W TO247 |
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Image | Part No | Mfg | Description | Pricing (USD) |
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APT30D100B |
Other |
Data Sheet |
Negotiable |
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APT30D100BCA |
Other |
Data Sheet |
Negotiable |
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APT30D100BCAG |
DIODE ULT FAST 2X18A 1000V TO247 |
Data Sheet |
Negotiable |
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APT30D100BCTG |
DIODE ULT FAST 2X30A 1000V TO247 |
Data Sheet |
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APT30D100BHBG |
DIODE ULT FAST 2X18A 1000V TO247 |
Data Sheet |
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APT30D120BCTG |
DIODE ULT FAST 2X30A 1200V TO247 |
Data Sheet |
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