(China (Mainland))
Product Summary
The 2SA503 is a silicon PNP epitaxial.
Parametrics
2SA503 absolute maximum ratings: (1)Collector-Base Voltage: 60V; (2)Collector-Emitter Voltage: -50V; (3)Emitter-Base Voltage: -5V; (4)Collector Current: -600mA; (5)Emitter Current: 600mA; (6)Total Device Dissipation: 800mW; (7)Operating Junction and Storage Temperature Range: -65 to 175℃.
Features
2SA503 features: (1)Collector-Base Cutoff Current: -0.5μA; (2)Emitter-Base Cutoff Current: -1μA; (3)D.C. Current Gain: 30 to 300; (4)Collector Saturation Voltage: -0.2 to -0.5V; (5)Base Saturation Voltage: -0.8 to -1.5V; (6)Gain-Bandwidth Product: 130MHz; (7)Output Capacitance: 18 to 30 pF; (8)Base Resistance: 10 to 30Ω.
Diagrams
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 2SA561 |
Other |
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Data Sheet |
Negotiable |
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2SA561-0 |
Other |
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Data Sheet |
Negotiable |
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2SA561GR |
Other |
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Data Sheet |
Negotiable |
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2SA561Y |
Other |
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Data Sheet |
Negotiable |
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2SA562 |
Other |
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Data Sheet |
Negotiable |
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2SA562TM |
Other |
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Data Sheet |
Negotiable |
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