Product Summary
The 2N4239 is a silicon planar epitaxial npn transistor.
Parametrics
2N4239 absolute maximum ratings: (1)VCBO Collector – Base Voltage: 100V; (2)VCEO Collector – Emitter Voltage: 80V; (3)VEBO Emitter – Base Voltage: 6V; (4)IC Continuous Collector Current: 1.0A; (5)IB Base Current: 0.5A; (6)PD Total Power Dissipation at TA = 25°C: 1.0W; (7)Derate Above 25°C: 5.7mW/°C; (8)PD Total Power Dissipation at TC = 25°C: 6W; (9)Derate Above 25°C: 34mW/°C; (10)TJ Junction Temperature Range: -65 to +200°C; (11)Tstg Storage Temperature Range: -65 to +200°C.
Features
2N4239 features: (1)VCBO=100V(Min), VCEO=80V(Min); (2)Hermetic TO-39 Metal package.; (3)Ideally suited for General Purpose and Amplifier Applications; (4)Screening Options Available.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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2N4239 |
Central Semiconductor |
Transistors Bipolar (BJT) NPN Power Ampl |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
2N4208 |
Central Semiconductor |
Transistors Bipolar (BJT) PNP Sat SW |
Data Sheet |
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2N4220 |
Other |
Data Sheet |
Negotiable |
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2N4220A |
Other |
Data Sheet |
Negotiable |
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2N4221 |
Other |
Data Sheet |
Negotiable |
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2N4221A |
Other |
Data Sheet |
Negotiable |
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2N4222 |
Other |
Data Sheet |
Negotiable |
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