Product Summary

The W982516BH75L is a high-speed synchronous dynamic random access memory (SDRAM), organized as 4M words × 4 banks × 16 bits. Using pipelined architecture and 0.175 μm process technology, the W982516BH75L delivers a data bandwidth of up to 143M words per second (-7). To fully comply with the personal computer industrial standard, the W982516BH75L is sorted into two speed grades: -7 and -75. By having a programmable Mode Register, the system can change burst length, latency cycle, interleave or sequential burst to maximize its performance. The W982516BH75L is ideal for main memory in high performance applications.

Parametrics

W982516BH75L absolute maximum ratings: (1)Input, Output Voltage VIN, VOUT: -0.3 - VCC + 0.3 V; (2)Supply Voltage VCC, VCCQ: -0.3 - 4.6 V; (3)Operating Temperature (-7/-75/75L) TOPR: 0 - 70 ℃; (4)Operating Temperature (75I) TOPR: -40 - 85 ℃; (5)Storage Temperature TSTG: -55 - 150 ℃; (6)Soldering Temperature (10s) TSOLDER: 260 ℃; (7)Power Dissipation PD: 1 W; (8)Short Circuit Output Current IOUT: 50 mA.

Features

W982516BH75L features: (1)3.3V ±0.3V Power Supply; (2)Up to 143 MHz Clock Frequency; (3)4,194,304 Words × 4 Banks × 16 Bits Organization; (4)Self Refresh Mode: Standard and Low Power; (5)CAS Latency: 2 and 3; (6)Burst Length: 1, 2, 4, 8, and Full Page; (7)Burst Read, Single Writes Mode; (8)Byte Data Controlled by LDQM, UDQM; (9)Power-down Mode; (10)Auto Precharge and Controlled Precharge; (11)8K Refresh Cycles/64 mS; (12)Interface: LVTTL; (13)Packaged in TSOP II 54-pin, 400 mil - 0.80.

Diagrams

W982516BH75L pin connection