Product Summary

The W26NM60 is a Zener-Protected MDmesh TM Power MOSFET. It is new revolutionary MOSFET technology that associates the Multiple Drain process with the horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the proprietary strip technique yields overall dynamic performance that is significantly better than that of similar products. The W26NM60 is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.

Parametrics

W26NM60 absolute maximum ratings: (1)Drain-source Voltage (VGS = 0): 600 V; (2)Drain-gate Voltage (RGS = 20 kΩ): 600 V; (3)Gate- source Voltage: ± 30 V; (4)Drain Current (continuous) at TC = 25℃: 30 A; (5)Drain Current (continuous) at TC = 100℃: 18.9 A; (6)Drain Current (pulsed): 120 A; (7)PTOT Total Dissipation at TC = 25℃: 313 W; (8)Derating Factor: 2.5 W/℃; (9)Gate source ESD(HBM-C=100pF, R=1.5KΩ): 6000 V; (10)Peak Diode Recovery voltage slope℃ 15 V/ns; (11)Operating Junction Temperature: -55 to 150℃ ; (12)Storage Temperature: -55 to 150℃ .

Features

W26NM60 features: (1)typical RDS(on) = 0.125Ω; (2)high dv/dt and avalanche capabilities; (3)improved ESD capability; (4)low input capacitance and gate charge; (5)low gate input resistance.

Diagrams

W26NM60 Internal Schematic Diagram