Product Summary

The TC58FVM6B2ATG65 is a 67108864-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 8388608 words × 8 bits or as 4194304 words × 16 bits. The TC58FVM6B2ATG65 features commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands are based on the JEDEC standard. The Program and Erase operations are automatically executed in the chip. The TC58FVM6B2ATG65 also features a Simultaneous Read/Write operation so that data can be read during a Write or Erase operation.

Parametrics

TC58FVM6B2ATG65 absolute maximum ratings: (1)VDD supply voltage: -0.6~4.6 V; (2)Input voltage: -0.6~VDD + 0.5 (≤ 4.6)(1)V; (3)Input/Output voltage: -0.6~VDD + 0.5 (≤ 4.6)(1)V; (4)Maximum input voltage for A9, OE and RESET (2): 13.0 V; (5)Maximum input voltage for WP/ACC (2): 10.5 V; (6)Power dissipation: 600 mW; (7)Soldering temperature (10s): 260 °C; (8)Storage temperature: -55~150 °C; (9)Operating temperature: -40~85 °C; (10)Output short-circuit current(3): 100 mA.

Features

TC58FVM6B2ATG65 features: (1)Power supply voltage VDD = 2.3 V~3.6 V; (2)Operating temperature Ta = -40°C~85°C; (3)Organization 8M × 8 bits/4M × 16 bits; (4)Block erase architecture 8 × 8 Kbytes/127 × 64 Kbytes; (5)Mode control: Compatible with JEDEC standard commands; (6)Power consumption: 10 μA (Standby); 15 mA (Program/Erase operation); 55 mA (Random read operation); 11 mA (Address increment read operation); 5 mA (Page read operation).

Diagrams

TC58FVM6B2ATG65 pin connection

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