TC58512FT

TC58512FT, 3.3 V, 512-Mbit (553,648,128) bit, CMOS NAND E2PROM, TSOP

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Price:: US $1.80~2.00 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
1 ~ 10 :	2.00 / Piece
20 ~ 50 :	1.80 / Piece

PartNumber:: TC58512FT

Brand:: Toshiba Semiconductor - Toshiba | Pack: TSOP | D/C: 07+

Availability:: Supply Ability: 1/Month Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-08-08

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Part Number:TC58512FT
US $1.80 - 2.00
Quantity:

piece

Product Summary

The TC58512FT is a single 3.3 V 512-Mbit (553,648,128) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes* 32 pages* 4096 blocks. The TC58512FT has a 528-byte static register which allows program and read data to be transferred between the register and the memory cell array in 528-byte increments. The Erase operation is implemented in a single block unit.

Parametrics

TC58512FT absolute maximum ratings: (1)Power Supply Voltage: -0.6 to 4.6 V; (2)Input Voltage: -0.6 to 4.6 V; (3)Input/Output Voltage: -0.6 V to VCC + 0.3 V (≤4.6 V); (4)Power Dissipation: 0.3 W; (5)Soldering Temperature (10s): 260 °C; (6)Storage Temperature: -55 to 150 °C; (7)Operating Temperature: 0 to 70 °C.

Features

TC58512FT features: (1)Organization: Memory cell allay 528*128K*8 , Register 528*8 , Page size 528 bytes, Block size (16K +512)bytes; (2)Modes: Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Multi Block Program, Multi Block Erase; (3)Mode control: Serial input/output , Command control; (4)Power supply VCC = 2.7 V to 3.6 V; (5)Program/Erase Cycles 1E5 cycle (with ECC); (6)Access time: Cell array to register 25 us max, Serial Read Cycle 50 ns min.