STW9NB90

PowerMESH MOSFET, TO-3P, 900 V, 38 A, 190W, 0.85 Ω

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PartNumber:: STW9NB90

Brand:: STMicroelectronics - ST | Pack: TO | D/C: 09+

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Products Upload time: 2012-03-21

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Part Number:STW9NB90
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Product Summary

The STW9NB90 is a PowerMESH MOSFET. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. The applicaitons of the STW9NB90 include high current, high speed switching, switch mode power supplies(SMPS) and DC-AC converters for welding equipmentand uninterruptible powersupplies and motor drive.

Parametrics

STW9NB90 absolute maximum ratings: (1)VDS, Drain-source Voltage (VGS =0): 900 V; (2)VDGR, Drain- gate Voltage (RGS =20kΩ): 900 V; (3)VGS, Gate-source Voltage: ± 30 V; (4)ID, Drain Current (continuous) at Tc =25℃: 9.7A; (5)ID, Drain Current (continuous) at Tc =100℃: 6A; (6)IDM(·), Drain Current (pulsed): 38 A; (7)Ptot, Total Dissipation at Tc =25℃: 190W; (8)Derating Factor: 1.52 W/℃; (9)dv/dt, Peak Diode Recovery voltage slope: 4 V/ns; (10)Tstg, Storage Temperature: -65 to 150℃; (11)Tj, Max. Operating Junction Temperature: 150℃.

Features

STW9NB90 features: (1)typical RDS(on) = 0.85 Ω; (2)extremelyhigh dv/dt capability; (3)± 30V gate to source voltage rating; (4)100% avalanche tested; (5)very lowintrinsic capacitances; (6)gate charge minimized.