Product Summary

The STW12NK90Z is an N-channel 900V - 0.72Ω - 11A - TO-247 Zener-protected SuperMESH Power MOSFET. The STW12NK90Z is obtained through an extreme optimization of ST’s well established strip-based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. The STW12NK90Z is suitable for Switching application.

Parametrics

STW12NK90Z absolute maximum ratings: (1)VDS, Drain-source voltage (VGS = 0): 900 V; (2)VGS, Gate- source voltage: ± 30 V; (3)ID, Drain current (continuous) at TC = 25℃: 11 A; (4)ID, Drain current (continuous) at TC = 100℃: 7 A; (5)IDM, Drain current (pulsed): 44 A; (6)Ptot, Total dissipation at TC = 25℃: 230 W; (7)Derating Factor: 1.85 W/℃; (8)VESD(G-S), Gate source ESD(HBM-C=100pF, R=1.5KΩ): 6000 V; (9)EAS, Single pulse avalanche energy: 4.5 mJ; (10)Tstg, Storage temperature: -55 to 150℃; (11)Tj, Max. operating junction temperature: -55 to 150℃.

Features

STW12NK90Z features: (1)Extremely high dv/dt capability; (2)100% avalanche tested; (3)Gate charge minimized; (4)Very low intrinsic capacitances; (5)Very good manufacturing repeatibility.

Diagrams

STW12NK90Z internal schematic diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
STW12NK90Z
STW12NK90Z

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Data Sheet

0-1: $2.84
1-10: $2.39
10-100: $2.08
100-250: $1.87
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(USD)
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Data Sheet

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