(China (Mainland))
Product Summary
The STE38NA50 is an N-Channel MOSFET.
Parametrics
STE38NA50 absolute maximum ratings: (1)Maximum power dissipation (Pd): 400W; (2)Maximum drain-source voltage (Uds): 500V; (3)Maximum drain-gate voltage (Udg): 500V; (4)Maximum gate-source voltage (Ugs): 20V; (5)Maximum drain current (Id): 38A; (6)Maximum junction temperature (Tj): 150℃; (7)Rise Time of STE38NA50 transistor (tr): 60/120; (8)Drain-source Capacitance (Cd), pf: 12nF; (9)Maximum drain-source on-state resistance (Rds), Ohm: 0.135.
Diagrams
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