(China (Mainland))
Product Summary
The P28F010-120 is a CMOS flash memory. The P28F010-120 offers the most cost-effective and reliable alternative for read/write random access nonvolatile memory. The P28F010-120 adds electrical chip-erasure and reprogramming to familiar EPROM technology. Memory contents can be rewritten: in a test socket; in a PROM-programmer socket; onboard during subassembly test; in-system during final test; and in-system after-sale. The P28F010-120 increases memory flexibility, while contributing to time and cost savings.
Parametrics
P28F010-120 absolute maximum ratings: (1)Operating temperature during read: 0 to 70 ℃; During erase/program: 0 to 70 ℃; (2)Operating temperature during read: -40 to 85 ℃; During erase/program : -40 to 85 ℃; (3)Temperature under bias: -10 to 80 ℃; (4)Temperature under bias: -50 to 95 ℃; (5)Storage temperature: -65 to 125 ℃; (6)Voltage on any pin with respect to ground: -2.0 to 7.0 V; (7)Voltage on pin a9 with respect to ground : -2.0 to 13.5 V; (8)VPP supply voltage with respect to ground during erase/program: -2.0 to 14 V; (9)VCC supply voltage with respect to ground: -2.0 to 7.0 V; (10)Output short circuit current: 100 mA.
Features
P28F010-120 features: (1)Flash electrical chip-erase: 1 second typical chip-erase; (2)Quick pulse programming algorithm: 10 ms typical byte-program; 2 second chip-program; (3)100,000 erase/program cycles; (4)12.0V ±5% VPP; (5)High-performance read: 65 ns maximum access time; (6)CMOS low power consumption: 10 mA Typical active current; 50 ma typical standby current; Watts data retention power; (7)Integrated program/erase stop timer; (8)Command register architecture for microprocessor/microcontroller compatible write interface; (9)Noise immunity features: ±10% VCC tolerance; maximum latch-up immunity through EPI processing; (10)ETOXTM nonvolatile flash technology: EPROM-compatible process base; High-volume manufacturing experience.
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