Product Summary

The MWI75-12E8 is an IGBT Module. The applications of the MWI75-12E8 include AC drives and power supplies with power factor correction.

Parametrics

MWI75-12E8 absolute maximum ratings: (1)VCES : 1200 V; (2)VGES : ± 20 V; (3)IC25 : 130 A; (4)IC80 : 90 A; (5)tSC : 10 μs; (6)Ptot : 500 W.

Features

MWI75-12E8 features: (1)low saturation voltage; (2)positive temperature coefficient; (3)fast switching; (4)short tail current for optimized performance also in resonant circuits; (5)fast reverse recovery; (6)low operating forward voltage; (7)low leakage current; (8)solderable pins for PCB mounting; (9)isolated copper base plate.

Diagrams

MWI75-12E8 dimension

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
MWI75-12E8
MWI75-12E8

Ixys

Discrete Semiconductor Modules 75 Amps 1200V

Data Sheet

Negotiable 
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
MWI75-06A7
MWI75-06A7

Ixys

Discrete Semiconductor Modules 75 Amps 600V

Data Sheet

Negotiable 
MWI75-06A7T
MWI75-06A7T

Ixys

IGBT Modules 75 Amps 600V

Data Sheet

Negotiable 
MWI75-12A5
MWI75-12A5

Other


Data Sheet

Negotiable 
MWI75-12A8
MWI75-12A8

Ixys

Discrete Semiconductor Modules IGBT MOD 1200V, 75A

Data Sheet

Negotiable 
MWI75-12A8T
MWI75-12A8T

Ixys

Discrete Semiconductor Modules 75 Amps 1200V

Data Sheet

Negotiable 
MWI75-12E8
MWI75-12E8

Ixys

Discrete Semiconductor Modules 75 Amps 1200V

Data Sheet

Negotiable