Product Summary

The MT28F400B3WG-8TF is a nonvolatile, electrically block-erasable (flash), programmable memory device containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5V VPP voltage, while all operations are performed with a 3.3V VCC. Due to process technology advances, 5V VPP is optimal for application and production programming. The MT28F400B3WG-8TF is fabricated with Micron’s advanced 0.18µm CMOS floating-gate process.

Parametrics

MT28F400B3WG-8TF absolute maximum ratings: (1)Voltage on VCC Supply, Relative to VSS: -0.5V to +4V; (2)Input Voltage Relative to VSS: -0.5V to +4V; (3)VPP Voltage Relative to VSS: -0.5V to +5.5V; (4)RP# or A9 Pin Voltage, Relative to VSS: -0.5V to +12.6V; (5)Temperature Under Bias: -40 to +85℃; (6)Storage Temperature (plastic): -55 to +125℃; (7)Power Dissipation: 1W.

Features

MT28F400B3WG-8TF features: (1)Smart 3 technology (B3); (2)Compatible with 0.3μm Smart 3 device; (3)Advanced 0.18μm CMOS floating-gate process; (4)Address access time: 80ns; (5)100,000 ERASE cycles; (6)Industry-standard pinouts; (7)Inputs and outputs are fully TTL-compatible; (8)Automated write and erase algorithm; (9)Two-cycle WRITE/ERASE sequence; (10)Byte- or word-wide READ and WRITE; (11)Byte-wide READ and WRITE only; (12)TSOP and SOP packaging options.

Diagrams

MT28F400B3WG-8TF pin connection