MJW16018

MJW16018, NPN silicon power transistor, 800 Vdc, 10 Adc, 125 Watts, TO

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Price:: US $0.80~1.00 / piece [Get Latest Price]

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Qty (lots)	Price/lot
1 ~ 10 :	1.00 / Piece
20 ~ 100 :	0.80 / Piece

PartNumber:: MJW16018

Brand:: ON Semiconductor - ON | Pack: TO | D/C: 06+

Availability:: Supply Ability: 1/Month Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Total Price:: US $0

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Products Upload time: 2013-06-14

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Part Number:MJW16018
US $0.80 - 1.00
Quantity:

piece

Product Summary

The MJW16018 is an NPN silicon power transistor. The MJW16018 is designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. The MJW16018 particularly suited for line–operated switchmode applications. Applications are (1)Switching regulators; (2)Inverters; (3)Solenoids; (4)Relay drivers; (5)Motor controls; (6)Deflection circuits.

Parametrics

MJW16018 absolute maximum ratings: (1)Collector-emitter voltage VCEO(sus): 800 Vdc; (2)Collector-emitter voltage VCEV: 1500 Vdc; (3)Emitter-base voltage: 6 Vdc; (4)Collector current continuous IC: 10 Adc; Peak(1) ICM: 15 Adc; (5)Base current continuous IB: 8 Adc; Peak(1) IBM: 12 Adc; (6)Total power dissipation @TC = 25°C: 125 Watts; @TC = 100°C: 50 Watts; Derate above Tq = 25 ℃: 1 W/℃; (7)Operating and storage junction temperature range: -55 to 150°C.

Features

MJW16018 features: (1)Collector–emitter voltage — VCEV = 1500 Vdc; (2)Fast turn–off times: 80 ns inductive fall time — 100℃(Typ); 110 ns inductive crossover time — 100℃ (Typ); 4.5 μs inductive storage time — 100℃ (Typ); (3)100℃ performance specified for: reverse–Biased SOA with inductive load; Switching times with inductive loads; Saturation voltages; leakage currents.