(China (Mainland))
Product Summary
The M5M29KT641AVP is a 3.3V-only high speed 33,554,432-bit CMOS boot block FLASH Memory with alternating BGO(Back Ground Operation) feature. The BGO feature of the device allows Program or Erase operations to be performed in one bank while the device simultaneously allows Read operations to be performed on the other bank. This BGO feature is suitable for mobile and personal computing, and communication products. The M5M29KT641AVP is fabricated by CMOS technology for the peripheral circuit and DINOR IV(Divided bit-line NOR IV) architecture for the memory cell, and are available in 48pin TSOP(I). The applications of the M5M29KT641AVP are Code Strage, Digital Cellular Phone, Telecommunication, Mobile Computing Machine, PDA (Personal Digital Assistance), Car Navigation System, Video Game Machine.
Parametrics
M5M29KT641AVP general specifications: (1)operating voltage: 2.7 to 3.6V; (2)boot block: bottom boot; (3)density/write protection/word organizetion: 32M WP1#, x8/x16.
Features
M5M29KT641AVP features: (1)Organization: 2,097,152 word x 16bit, 4,194,304 word x 8 bit; (2)Supply voltage: VCC = 2.7 ~ 3.6V; (3)Access time: 80ns (Vcc=3.0~3.6V), 90ns (Vcc=2.7~3.6V); (4)Power Dissipation: Read: 72 mW (Max. at 5MHz), (After Automatic Power saving): 0.33µW(typ.), Program/Erase: 126mW (Max.), Standby: 0.33µW (typ.); (5)Deep power down mode: 0.33µW (typ.); (6)Auto program for Bank(I)and Bank(II): Program Time: 4ms (typ.), Program Unit: (Byte Program): 1word/1byte, (Page Program): 128word/256byte.
Diagrams
