Product Summary

The M54522P is a darlington transistor array with clamp diode. M54522P is eight-circuit Darlington transistor arrays with clamping diodes. The circuit is made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.

Parametrics

M54522P absolute maximum ratings: (1)Collector-emitter voltage: -0.5 to +40V; (2)Collector current: 400mA; (3)Input voltage: -0.5 to +40V; (4)Clamping diode forward current: 400mA; (5)Clamping diode reverse voltage: 40V; (6)Operating temperature: -20 to +75V; (7)Storage temperature: -55 to 125V.

Features

M54522P features: (1)High breakdown voltage (BVCEO 3 40V); (2)High-current driving (Ic(max) = 400mA); (3)With clamping diodes; (4)Driving available with PMOS IC output; (5)Wide operating temperature range (Ta = –20 to +75℃).

Diagrams

M54522P block diagram

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