(China (Mainland))
Product Summary
The M29W800DB-70N1 is an 8-Mbit (1 Mbit × 8 or 512 Kbits × 16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6 V) supply. On power-up the memory defaults to its read mode where it can be read in the same way as a ROM or EPROM. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. The M29W800DB-70N1 is offered in SO44, TSOP48 (12 × 20 mm) and TFBGA48 6 × 8 mm (0.8 mm pitch) packages. The memory is supplied with all the bits erased.
Parametrics
M29W800DB-70N1 absolute maximum ratings: (1)TBIAS Temperature under bias: min=-50℃, max=125℃; (2)TSTG Storage temperature: min=-65℃, max=150℃; (3)VIO Input or output voltage: min=-0.6V, max=VCC + 0.6 V; (4)VCC Supply voltage: min=-0.6V, max=4V; (5)VID Identification voltage: min=-0.6V, max=13.5V.
Features
M29W800DB-70N1 features: (1)Supply voltage: VCC = 2.7 V to 3.6 V for program, erase and read; (2)Access times: 45, 70, 90 ns; (3)Programming time: 10 μs per byte/word typical; (4)19 memory blocks: 1 boot block (top or bottom location); 2 parameter and 16 main blocks; (5)Program/erase controller: Embedded byte/word program algorithms; (6)Erase suspend and resume modes: Read and program another block during erase suspend; (7)Unlock bypass program command: Faster production/batch programming.
Diagrams
