(China (Mainland))
Product Summary
The m29W800ab-80n1 is an 8 Mbit (1Mb x8 or 512Kb x16) low voltage single supply flash memory that may be erased electrically at the block or chip level and programmedin-system on a Byte-by-Byte or Word-by-Word basis using only a single 2 .7V to 3.6V Vcc supply. For Programand Erase operations the necessary high voltages of the m29W800ab-80n1 are generated internally. The m29W800ab-80n1 can also be programmed in standard programmers.
Parametrics
m29W800ab-80n1 absolute maximum ratings: (1) Ambient Operating Temperature TA: -40 to 85°C; (2) Storage Temperature TSTG: -65 to 150°C; (3) Input or Output Voltage VIO: -0.6 to 5V; (4) Supply Voltage Vcc: -0.6 to 5V; (5) Identification Voltage VID: -0.6 to 13.5V; (6) Temperature Under Bias TBIAS: -50 to 125°C.
Features
m29W800ab-80n1 features: (1) 2.7 to 3.6V supply voltage for programm, erase and read; (2) access times:80ns; (3) programming time: 10μs typical; (4) 19 memory blocks; (5) program/erase controller; (6) unlock bypass program command; (7)low power consumption; (8) electronic signature.
Diagrams
