(China (Mainland))
Product Summary
The M29W320DT-70N6 is a 32 Mbit (4Mb x8 or 2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage(2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29W320DT-70N6 is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Each block can be protected independently to prevent accidental Program or Erase commands from modifying the memory.
Parametrics
M29W320DT-70N6 absolute maxing ratings: (1)Temperature under bias: min=-50℃, max=125℃; (2)Storage temperature: min=-65℃ max=150℃; (3)Input or Output voltage(1)(2): min=-0.6V, max=VCC+0.6V; (4)Supply voltage: min=-0.6V, max=4V; (5)Identification voltage: min=-0.6V, max=13.5V; (6)Program voltage: min=-0.6V, max=13.5V..
Features
M29W320DT-70N6 features: (1)Supply voltage: VCC=2.7V to 3.6V for program, erase and read; VPP =12V for fast program (optional); (2)Access times: 70, 90ns; (3)Programming time: 10μs per byte/word typical; (4)67 Memory blocks: 1 boot block (top or bottom location), 2 parameter and 64 main blocks; (5)Program/Erase controller: Embedded byte/word program algorithms; (6)Erase suspend and resume modes: Read and program another block during erase suspend; (7)Unlock bypass program command: Faster production/batch programming; (8)VPP/WP pin for fast Program and Write Protect; (9)Temporary block unprotection mode; (10)Common flash interface: 64 bit security code.
Diagrams
