(China (Mainland))
Product Summary
The M21L216128A-10T is a high speed CMOS SRAM. The M21L216128A-10T is organized as 131,072 by 16 bits, it is produced by high performance CMOS process. The M21L216128A-10T offers center power and ground pins for improved performance and noise immunity. Static design eliminates the need for external clocks or timing strobes. For increased system flexibility and eliminating bus contention problems, this device offers chip enable (CE ), separate byte enable controls (LB and HE ) and output enable (OE ) with this organization.
Parametrics
M21L216128A-10T absolute maximum ratings: (1)Voltage on VCC Supply Relative to Vss: -0.5V to +4.6V; (2)VIN: -0.5V to VCC+1.0V; (3)Operating Temperature, Topr: 0 °C to +70 °C; (4)Storage Temperature (plastic): -55 °C to +125 °C; (5)Junction Temperature: 125 °C; (6)Power Dissipation: 1.0W; (7)Short Circuit Output Current: 50mA.
Features
M21L216128A-10T features: (1)Fast access times : 10, 12, and 15ns; (2)Fast OE access times : 5, 6, and 7ns; (3)Single +3.3V ± 0.3V power supply; (4)Fully static -- no clock or timing strobes necessary; (5)All inputs and outputs are TTL-compatible; (6)Three state outputs; (7)Center power and ground pins for greater noise immunity; (8)Easy memory expansive with CE and OE options; (9)Automatic CE power down.
Diagrams
