KM29W040AT

KM29W040AT, NAND flash memory, 7.0 V, 5 mA, 500 ms, TSOP

Rated 5 Rating 5 | reviews | Write a review

Price:: US $2.00~3.00 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
1 ~ 5 :	3.00 / Piece
10 ~ 100 :	2.00 / Piece

PartNumber:: KM29W040AT

Brand:: Sharma Electro Components,Inc - SEC | Pack: TSOP | D/C: 07+

Availability:: Supply Ability: 1/Month Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

Place Order via Escrow Service

Not exactly what you want? Post a quick Buying Request!

Sold By

Ms. Pamela's store

(China (Mainland))

100% Positive feedback

Detailed seller ratings

Visit Store

Contact Now

Esrcow Service

Place orders confidently and securely via it

Safe payments
Quick and easy transactions
Free service charges

Learn More >>

Previous Next

Products Upload time: 2013-07-07

From Other Seller

Part Number:KM29W040AT
US $2.00 - 3.00
Quantity:

piece

Product Summary

The KM29W040AT is a 512Kx8bit NAND flash memory. Its NAND cell structure provides the most cost-effective solution for digital audio recording. A program operation programs a 32-byte frame in typically 500ms and an erase operation erase a 4K-byte block in typically 6ms. Data in a frame can be read out at a burst cycle rate of 120ns/byte. The I/O pins serve as the ports for address and data input/output as well as for command inputs. The on-chip write controller automates the program and erase operations, including program or erase pulse repetition where required, and performs internal verification of cell data.

Parametrics

KM29W040AT absolute maximum ratings: (1)Voltage on any pin relative to VSS VIN: -0.6 to +7.0 V; (2)Temperature Under Bias TBIAS: -10 to +125 °C; (3)Storage temperature TSTG: -65 to +150 °C; (4)Short circuit output current IOS: 5 mA.

Features

KM29W040AT features: (1)Voltage supply: 3.0V~5.5V; (2)Organization - Memory cell array : 512K x 8; Data register : 32 x 8 bit; (3)Automatic program and erase (Typical)- Frame program : 32 Byte in 500ms; Block erase : 4K byte in 6ms; (4)32-Byte frame read operation - Random access : 15ms(Max.); Serial frame access : 120ns(Min.); (5)Command/address/data multiplexed I/O port; (6)Low operation current (Typical)- 10mA standby current; 10mA read/ program/erase current; (7)Reliable CMOS floating-gate technology - Endurance : 100K program/erase cycles; (8)44(40)- lead TSOP type II (400mil / 0.8 mm pitch).