Product Summary

The KF5N50 is a N channel MOS field effect transistor. This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies.

Parametrics

KF5N50 absolute maximum ratings: (1)Drain-Source Voltage : 500 V; (2)Gate-Source Voltage : ±30 V; (3)Drain Current: 4.3A; (4)Single Pulsed Avalanche Energy: 270 mJ; (5)Repetitive Avalanche Energy: 8.6 mJ; (6)Peak Diode Recovery: 20 V/ns; (7)Drain Power Dissipation: 59.5 W; (8)Maximum Junction Temperature : 150℃; (9)Storage Temperature Range : -55 to 150℃.

Features

KF5N50 features: (1)VDSS= 500V, ID= 4.3A; (2)Drain-Source ON Resistance : RDS(ON)=1.4Ω(Max) @VGS = 10V; (3)Qg(typ) = 12nC.

Diagrams

KF5N50 dimension