K9K1G08U0M-YCB0

128M x 8bit NAND flash memory, +4.6V, 30mA, TSOP

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Price:: US $1.80~2.00 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
1 ~ 10 :	2.00 / Piece
20 ~ 100 :	1.80 / Piece

PartNumber:: K9K1G08U0M-YCB0

Brand:: Samsung semiconductor - SAMSUNG | Pack: TSOP | D/C: 09+

Availability:: Supply Ability: 1/Month Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-08-05

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Part Number:K9K1G08U0M-YCB0
US $1.80 - 2.00
Quantity:

piece

Product Summary

The k9k1g08u0m-ycb0 is a 128M (134,217,728) x 8bit NAND Flash Memory with a spare 4.096K(4,194,304) x 8bit. NAND cell of the k9k1g08u0m-ycb0 provides the most cost-effective solution for the solid state mass storage market. A program operation of the k9k1g08u0m-ycb0 can be performed in typical 200μs on the 528-byte page and an erase operation can be performed in typical 2ms on a 16K-byte block. The I/O pins of the k9k1g08u0m-ycb0 serve as the ports for address and data input/output as well as command inputs. Applications of the k9k1g08u0m-ycb0 include: solid state file storage and other portable applications requiring non-volatility.

Parametrics

k9k1g08u0m-ycb0 absolute maximum ratings: (1) Voltage on any pin relative to VSS VIN: -0.6 to +4.6V, VCC: -0.6 to +4.6V; (2) Temperature Under Bias TBIAS: -10 to +125°C; (3) Storage Temperature Tstg: -65 to +150°C.

Features

k9k1g08u0m-ycb0 features: (1) Voltage Supply: 2.7V~3.6V; (2) Memory Cell Array : (128M + 4,096K)bit x 8bit, Data Register : (512 + 16)bit x8bit multipled by eight planes; (3) Automatic Program and Erase: Automatic Program and Erase, Block Erase : (16K + 512) Byte; (4) 528-Byte Page Read Operation; (5) Fast Write Cycle Time; (6) Command/Address/Data Multiplexed I/O Port; (7) Hardware Data Protection; (8) Reliable CMOS Floating-Gate Technology; (9) Command Register Operation; (10) Intelligent Copy-Back Operation; (11) 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch); (12) Simultaneous Four Page/Block Program/Erase.