(China (Mainland))
Product Summary
The K9G8G08U0M-PCB0 is a 4G-bit NAND Flash Memory with spare 128M-bit. The K9G8G08U0M-PCB0 is offered in 2.7V and 3.3V Vcc. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be performed in typical 800μs on the 2,112-byte page and an erase operation can be performed in typical 1.5ms on a (256K+8K) byte block. Data in the data register can be read out at 30ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data.
Parametrics
K9G8G08U0M-PCB0 absolute maximum ratings: (1)Voltage on any pin relative to VSS, VCC: -0.6 to + 4.6V; VIN: -0.6 to + 4.6V; I/O: -0.6 to Vcc+0.3 (<4.6V); (2)Temperature Under Bias K9XXG08XXA-XCB0, TBIAS: -10 to +125℃; K9XXG08XXA-XIB0: -40 to +125℃; (3)Storage Temperature, TSTG: -65 to +150℃; (4)Short Circuit Current, Ios: 5 mA.
Features
K9G8G08U0M-PCB0 features: (1)Voltage Supply, 2.7V Device(K9G4G08B0A): 2.5V ~ 2.9V; 3.3V Device(K9G4G08U0A): 2.7V ~ 3.6V; (2)Organization, Memory Cell Array: (512M + 16M) x 8bit; Data Register: (2K + 64) x 8bit; (3)Automatic Program and Erase, Page Program: (2K + 64)Byte; Block Erase: (256K + 8K)Byte; (4)Page Read Operation, Page Size: (2K + 64)Byte; Random Read: 60μs(Max.); Serial Access: 30ns(Min.); (5)Memory Cell: 2bit / Memory Cell 512M x 8 Bit/1G x 8 Bit NAND Flash Memory; (6)Fast Write Cycle Time, Program time: 800μs(Typ.); Block Erase Time: 1.5ms(Typ.); (7)Command/Address/Data Multiplexed I/O Port; (8)Hardware Data Protection, Program/Erase Lockout During Power Transitions; (9)Reliable CMOS Floating-Gate Technology, Endurance: 5K Program/Erase Cycles(with 4bit/512byte ECC); Data Retention: 10 Years; (10)Command Register Operation; (11)Unique ID for Copyright Protection.
Diagrams
