(China (Mainland))
Product Summary
The K4S643232E-TC60 is a 67,108,864 bits synchronous high data rate dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions is possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the K4S643232E-TC60 to be useful for a variety of high bandwidth, high performance memory system applications.
Parametrics
K4S643232E-TC60 absolute maximum ratings: (1)Voltage on any pin relative to Vss: -1.0 ~ 4.6 V; (2)Voltage on VDD supply relative to Vss: -1.0 ~ 4.6 V; (3)Storage temperature: -55 ~ +150 °C; (4)Power dissipation: 1 W; (5)Short circuit current: 50 mA.
Features
K4S643232E-TC60 features: (1)3.3V power supply; (2)LVTTL compatible with multiplexed address; (3)Four banks operation; (4)All inputs are sampled at the positive going edge of the system; (5)clock; (6)Burst read single-bit write operation; (7)DQM for masking; (8)Auto self refresh; (9)15.6us refresh duty cycle.
Diagrams
