(China (Mainland))
Product Summary
The K4F151611D-TC60 is a 1,048,576 x 16 bit Fast Page Mode CMOS DRAM. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-50 or -60), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CASbefore-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. The K4F151611D-TC60 is fabricated using Samsung’s advanced CMOS process to realize high band-width, low power consumption and high reliability. The K4F151611D-TC60 may be used as graphic memory unit for microcomputer, personal computer and portable machines.
Parametrics
K4F151611D-TC60 absolute maximum ratings: (1)Voltage on any pin relative to VSS: VIN,VOUT: -1.0 to +7.0 V; (2)Voltage on VCC supply relative to VSS: VCC: -1.0 to +7.0 V; (3)Storage Temperature: Tstg: -55 to +150 °C; (4)Power Dissipation: PD: 1 W; (5)Short Circuit Output Current: IOS Address: 50 mA.
Features
K4F151611D-TC60 features: (1)Fast Page Mode operation; (2)2 CAS Byte/Word Read/Write operation; (3)CAS-before-RAS refresh capability; (4)RAS-only and Hidden refresh capability; (5)Self-refresh capability (L-ver only); (6)TTL(5V)/LVTTL(3.3V)compatible inputs and outputs; (7)Early Write or output enable controlled write; (8)JEDEC Standard pinout; (9)Available in 42-pin SOJ 400mil and 50(44)-pin TSOP(II)400mil packages; (10)Single +5V±10% power supply (5V product); (11)Single +3.3V±0.3V power supply (3.3V product).
Diagrams
