Product Summary

The k2837 is an N channel enhancement mode power field effect transistor. The k2837 is produced using Winsemi properietary, planar stripe, DMOS technology. The k2837 is well suited for high efficiency switch mode power supplies.

Parametrics

k2837 absolute maximum ratings: (1) drain source voltage VDSS: 500V; (2)ID: 24A continuous drain current (@Tc=25°C) , 15.2A continuous drain current (@Tc=100°C) ; (3) drain current pulsed IDM: 96A; (4) gate to source voltage VGS: ±30V; (5) single pulsed avalance energy: 1100mJ; (6) repetitive avalanche energy Ear: 29mJ; (7) total power dissipation (@Tc=25°C ) : 271W, debrating factor above 25°C: 2.22W/°C; (8) Junction and storage temperature: -55 to 150°C; (9) channel temperature TL: 300°C.

Features

k2837 features: (1) 24A, 500V, RDS (on) (Max0. 19Ω) @VGS=10V; (2) Ultra low gate charge (typical 90nC) ; (3) fast switching capability; (4) 100% avalanche tested; (5) maximum junction temperature range (150°C) .

Diagrams

k2837 test circuit