Product Summary

The K2717 is a silicon N channel MOS type.

Parametrics

K2717 absolute maximum ratings: (1)Drain-Source Voltage : 900 V; (2)Drain-Gate Voltage (RGS = 20kΩ) : 900 V; (3)Gate-Source Voltage : ±30 V; (4)Drain Current : 5A; (5)Drain Power Dissipation (Tc = 25℃) : 45 W; (6)Single Pulse Avalanche Energy : 595 mJ; (7)Avalanche Current : 5 A; (8)Channel Temperature : 150 ℃; (9)Storage Temperature Range : -55 to 150 ℃.

Features

K2717 features: (1)Low Drain-Source ON Resistance RDS (ON)=2.3Ω (Typ.); (2)Low Leakage Current : IDSS= 100μA (Max.) (VDS=720V); (3)Enhancement-Mode : Vth =2.0-4.0V (VDS= 10V, ID= 1mA).

Diagrams

K2717 dimension