Product Summary
The K1101 is an n-channel silicon power mos-fet. Applications of the K1101 are switching regulators, UPS, 3C-DC converters, general purpose power amplifier.
Parametrics
K1101 absolute maximum ratings: (1)Dr a in-source voltage Vuss:450V; (2)Continuous drain current Id: 10A; (3)Pulsed drain current Il>(PUl8): 35A; (4)Continuous reverse drain current IpH: 10A; (5)Liate-source peak voltage Voss: ±30V; (6)Max. power dissipation Pr.: 50W; (7)Operating and storage Tcd: 150℃; (8)temperature range Tg: -55 to 150℃.
Features
K1101 features: (1)High speed switching; (2)Low on-resistance; (3)No secondary breakdown; (4)l: ow driving power; (5)High voltage; (6)VCss-±30V Guarantee; (7)Avalanche-proof.
Diagrams
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