(China (Mainland))
Product Summary
The IXSH24N60 is a hiperfast IGBT.
Parametrics
IXSH24N60 absolute maximum ratings: (1)VCES TJ = 25℃ to 150℃: 600 V; (2)VCGR TJ = 25℃ to 150℃; RGE = 1 MΩ: 600 V; (3)VGES Continuous: ±20 V; (4)VGEM Transient: ±30 V; (5)IC25 TC = 25℃: 48 A; (6)IC90 TC = 90℃: 24 A; (7)ICM TC = 25℃, 1 ms: 96 A; (8)SSOA VGE= 15 V, TJ = 125℃, RG = 10 (RBSOA)Clamped inductive load @0.8 VCES ICM: 48 A; (9)PC TC = 25℃: 150 W; (10)TJ: -55 to +150℃; (11)TJM: 150℃; (12)Tstg: -55 to +150℃.
Features
IXSH24N60 features: (1)International standard package JEDEC TO-247 AD; (2)High frequency IGBT with guaranteed Short Circuit SOA capability; (3)2nd generation HDMOSTM process; (4)Low VCE(sat)- for low on-state conduction losses; (5)MOS Gate turn-on - drive simplicity.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 IXSH24N60 |
Ixys |
IGBT Transistors 48 Amps 600V 2.2 Rds |
Data Sheet |
Negotiable |
|
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|
IXSH24N60A |
Ixys |
IGBT Transistors S-SERIES LO VCE SNGL 600V 24A |
Data Sheet |
Negotiable |
|
||||
|
IXSH24N60U1 |
Ixys |
IGBT Transistors S-SERIE MED SPD IGBT FREEWHEELING 600V48A |
Data Sheet |
Negotiable |
|
||||
|
IXSH24N60AU1 |
Ixys |
IGBT Transistors 48 Amps 600V 2.7 Rds |
Data Sheet |
Negotiable |
|
||||
|
IXSH24N60BD1 |
Ixys |
IGBT Transistors 48 Amps 600V 2.5 Rds |
Data Sheet |
Negotiable |
|
||||
|
IXSH24N60B |
Ixys |
IGBT Transistors 48 Amps 600V 2.5 Rds |
Data Sheet |
Negotiable |
|
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