(China (Mainland))
Product Summary
The IS61LV25616-10T is a high-speed, 4,194,304-bit static RAM organized as 262,144 words by 16 bits. It is fabricated using ISSI’s high-performance CMOS technology. This IS61LV25616-10T coupled with innovative circuit design techniques, yields high-performance and low power consumption device.
Parametrics
IS61LV25616-10T absolute maximum ratings: (1)Terminal Voltage with Respect toGND, VTERM: -0.5 to VDD+0.5V; (2)Storage Temperature, TSTG: -65 to +150℃; (3)Power Dissipation, PT: 1.0W.
Features
IS61LV25616-10T features: (1)High-speed access time: 10, 12ns; (2)CMOS low power operation; (3)Low stand-by power: Less than 5 mA (typ.) CMOS stand-by; (4)TTL compatible interface levels; (5)Single 3.3V power supply; (6)Fully static operation: no clock or refresh required; (7)Three state outputs; (8)Data control for upper and lower bytes; (9)Industrial temperature available; (10)Lead-free available.
Diagrams
