(China (Mainland))
Product Summary
The IS42S16100C1-7TL is a 16Mb Synchronous DRAM. The IS42S16100C1-7TL is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The IS42S16100C1-7TL achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.
Parametrics
IS42S16100C1-7TL absolute maximum ratings: (1)VDD MAX Maximum Supply Voltage: -1.0 to +4.6 V; (2)VDDQ MAX Maximum Supply Voltage for Output Buffer: -1.0 to +4.6 V; (3)VIN Input Voltage: -1.0 to +4.6 V; (4)VOUT Output Voltage: -1.0 to +4.6 V; (5)PD MAX Allowable Power Dissipation: 1 W; (6)ICS Output Shorted Current: 50 mA; (7)TOPR Operating Temperature Com: 0 to +70 °C, Ind.: -40 to +85 °C; (8)TSTG Storage Temperature: -55 to +150 °C.
Features
IS42S16100C1-7TL features: (1)Clock frequency: 200, 166, 143 MHz; (2)Fully synchronous; all signals referenced to a positive clock edge; (3)Two banks can be operated simultaneously and independently; (4)Dual internal bank controlled by A11 (bank select); (5)Single 3.3V power supply; (6)2.5V VDD option available; (7)LVTTL interface; (8)Programmable burst sequence: Sequential/Interleave; (9)4096 refresh cycles every 64 ms; (10)Random column address every clock cycle; (11)Programmable CAS latency (2, 3 clocks); (12)Burst read/write and burst read/single write operations capability; (13)Burst termination by burst stop and precharge command; (14)Byte controlled by LDQM and UDQM; (15)Industrial temperature up to 143 MHz.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
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 IS42S16100C1-7TL |
ISSI |
DRAM 16M 1Mx16 143Mhz |
Data Sheet |
Negotiable |
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IS42S16100C1-7TLI |
ISSI |
DRAM 16M 1Mx16 143Mhz |
Data Sheet |
Negotiable |
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IS42S16100C1-7TLI-TR |
ISSI |
DRAM 16M 1Mx16 143Mhz |
Data Sheet |
Negotiable |
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IS42S16100C1-7TL-TR |
ISSI |
DRAM 16M 1Mx16 143Mhz |
Data Sheet |
Negotiable |
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