Product Summary
The IRFP450 is a power MOSFET. The IRFP450 is designed using the companys consolidated strip layout-based MESH OVERLAY] press. This technology matches and improves the performances compared with standard parts from various sources. Applications of the IRFP450 are high current switching, uninterruptible power supply (ups), dc/dc coverters for telecom, industrial, and lighting equipment.
Parametrics
IRFP450 absolute maximum ratings: (1)VDS Drain-source Voltage (VGS = 0): 500 V; (2)VDGR Drain- gate Voltage (RGS = 20 kW): 500 V; (3)VGS Gate-source Voltage: ± 20 V; (4)ID Drain Current (continuous)at Tc = 25 ℃: 14 A; (5)ID Drain Current (continuous)at Tc = 100 ℃: 8.7 A; (6)IDM Drain Current (pulsed): 56 A; (7)Ptot Total Dissipation at Tc = 25 ℃: 190 W; (8)Derating Factor: 1.5 W/℃; (9)dv/dt(1)Peak Diode Recovery voltage slope: 3.5 V/ns; (10)Tstg Storage Temperature: -65 to 150 ℃; (11)Tj Max. Operating Junction Temperature: 150 ℃.
Features
IRFP450 features: (1)typical rds(on)= 0.33 w; (2)extremely high dv/dt capability; (3)100% avalanche tested; (4)verylow intrinsic capacitances; (5)gatecharge minimized.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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IRFP450 |
Vishay/Siliconix |
MOSFET N-Chan 500V 14 Amp |
Data Sheet |
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IRFP450, SiHFP450 |
Other |
Data Sheet |
Negotiable |
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IRFP450A |
Vishay/Siliconix |
MOSFET N-Chan 500V 14 Amp |
Data Sheet |
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IRFP450_R4943 |
Fairchild Semiconductor |
MOSFET TO-247 N-Ch Power |
Data Sheet |
Negotiable |
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IRFP450A_R4944 |
Fairchild Semiconductor |
MOSFET TO-3P |
Data Sheet |
Negotiable |
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IRFP450A, SiHFP450A |
Other |
Data Sheet |
Negotiable |
|
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IRFP450LCPBF |
Vishay/Siliconix |
MOSFET N-Chan 500V 14 Amp |
Data Sheet |
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IRFP450APBF |
Vishay/Siliconix |
MOSFET N-Chan 500V 14 Amp |
Data Sheet |
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