(China (Mainland))
Product Summary
The IC61C256AH-12T is a very high-speed, low power, 32,768 word by 8-bit static RAM. The IC61C256AH-12T is fabricated using ICSI’s high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns maximum. The IC61C256AH-12T is pin compatible with other 32k x 8 SRAMs and are available in 28-pin 300mil PDIP, 300mil SOJ, and 8*13.4mm TSOP-1 package, 330 mil SOP.
Parametrics
IC61C256AH-12T absolute maximum ratings: (1)Terminal Voltage with Respect to GND: –0.5 to +7.0 V; (2)Temperature Under Bias: –55 to +125 °C; (3)Storage Temperature: –65 to +150 °C; (4)Power Dissipation: 1.5 W; (5)DC Output Current (LOW): 20 mA.
Features
IC61C256AH-12T features: (1)High-speed access times: 10, 12, 15, 20, 25 ns; (2)Low active power: 400 mW (typical); (3)Low standby power: 250 uW (typical)CMOS standby, 55 mW (typical) TTL standby; (4)Fully static operation: no clock or refresh required; (5)TTL compatible interface and outputs; (6)Single 5V power supply.
Diagrams
