HY27US08281A-TPCB

HY27US08281A-TPCB, NAND flash memory, 4.6 V, TSOP

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Price:: US $1.70~2.00 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
1 ~ 10 :	2.00 / Piece
20 ~ 100 :	1.70 / Piece

PartNumber:: HY27US08281A-TPCB

Brand:: Hynix Semiconductor - Hynix | Pack: TSOP | D/C: 05+

Availability:: Supply Ability: 1/Month Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-07-31

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Part Number:HY27US08281A-TPCB
US $1.70 - 2.00
Quantity:

piece

Product Summary

The HY27US08281A-TPCB is an NAND flash memory. The HY27US08281A-TPCB is a 16Mx8bit with spare 4G bit capacity. The HY27US08281A-TPCB is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. The HY27US08281A-TPCB contains 1024 blocks, composed by 32 pages consisting in two NAND structures of 16 series connected Flash cells. The copy back function allows the optimization of defective blocks management: when a page program operation fails the data can be directly programmed in another page inside the same array section without the time consuming serial data insertion phase. This device includes also extra features like OTP/Unique ID area, Block Lock mechanism, Automatic Read at Power Up, Read ID2 extension.

Parametrics

HY27US08281A-TPCB absolute maximum ratings: (1)Ambient Operating Temperature (Commercial Temperature Range): 0 to 70 ℃; (2)Ambient Operating Temperature (Extended Temperature Range): -25 to 85 ℃; (3)Ambient Operating Temperature (Industrial Temperature Range): -40 to 85 ℃; (4)TBIAS Temperature Under Bias: -50 to 125 ℃; (5)TSTG Storage Temperature: -65 to 150 ℃; (6)VIO(2)Input or Output Voltage: -0.6 to 4.6 V; (7)Vcc Supply Voltage: -0.6 to 4.6 V.

Features

HY27US08281A-TPCB features: (1)high density nand flash memories; (2)nand interface; (3)supply voltage - 3.3V device: VCC = 2.7 to 3.6V; (4)automatic page 0 read at power-up option; (5)electronic signature; (6)hardware data protection; (7)serial number option.