(China (Mainland))
Product Summary
The HY27US08121M-VPEB is a 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Memory that uses NAND cell technology. The device operates 3.3V and 1.8V voltage supply. The size of a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on whether the device has a x8 or x16 bus width. The HY27US08121M-VPEB features an open-drain Ready/Busy output that can be used to identify if the Program/ Erase/Read (PER) Controller is currently active. The use of an open-drain output allows the Ready/ Busy pins from several memories to be connected to a single pull-up resistor.
Parametrics
HY27US08121M-VPEB absolute maximum ratings: (1)Temperature Under Bias: -50 to 125°C; (2)TSTG Storage Temperature: -65 to 150°C; (3)Input or Output Voltage: -0.6 to 4.6 V; (4)Supply Voltage: -0.6 to 4.6 V.
Features
HY27US08121M-VPEB features: (1)high density nand flash memories; (2)NAND interface: *8 or *16 bus width, multiplexed address/data; (3)supply voltage: 3.3V device: VCC=2.7 to 3.6V; (4)Memory Cell Array - 528Mbit = 528 Bytes x 32 Pages x 4,096 Blocks; (5)block size: x16 device: (8K + 256 spare)Words; (6)page read/program: Random access: 12us (max), Sequential access: 50ns (min), Page program time: 200us (typ); (7)copy back program mode: Fast page copy without external buffering; (8)fast block erase: Block erase time: 2ms (Typ).
Diagrams
