(China (Mainland))
Product Summary
The Hynix HY27UA081G1M-TCB is a 128Mx8bit NAND Flash Memory with spare 4Mx8 bit capacity. It is offered in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The HY27UA081G1M-TCB is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. The HY27UA081G1M-TCB contains 1024 blocks, composed by 64 pages consisting in two NAND structures of 32 series connected Flash cells.
Parametrics
HY27UA081G1M-TCB absolute maximum ratings: (1)Ambient Operating Temperature (Temperature Range Option 1): 0 to 70 ℃; (2)Ambient Operating Temperature (Industrial Temperature Range): -40 to 85 ℃; (3)Temperature Under Bias: -50 to 125 ℃; (4)Storage Temperature: -65 to 150 ℃; (5)Input or Output Voltage: -0.6 to 4.6 V; (6)Supply Voltage: -0.6 to 4.6 V.
Features
HY27UA081G1M-TCB features: (1)high densitY NAND flash memories: Cost effective solutions for mass storage applications; (2)NAND interface: x8 or x16 bus width,Multiplexed Address/ Data, Pinout compatibility for all densities; (3)supply voltage: VCC = 2.7 to 3.6V : HY27UFxx1G2A; (4)Memory Cell Array: (2K+64) Bytes x 64 Pages x 1,024 Blocks, (1K+32) Bytes x 64 Pages x 1,024 Blocks; (5)page size: x8 device : (2K+64 spare) Bytes.
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