Product Summary

The HGTG30N60A4D is a kind of MOS gated high voltage switching device. It combines the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25℃ and 150℃.

Parametrics

HGTG30N60A4D absolute maximum ratings: (1)Collector to Emitter Voltage, BVCES: 600 V; (2)Collector Current Continuous: At TC = 25℃, IC25: 75 A; At TC = 110℃, IC110: 60 A; (3)Collector Current Pulsed, ICM: 240 A; (4)Gate to Emitter Voltage Continuous, VGES: ±20 V; (5)Gate to Emitter Voltage Pulsed, VGEM: ±30 V; (6)Switching Safe Operating Area at TJ = 150℃, SSOA: 150A at 600V; (7)Power Dissipation Total at TC = 25℃, PD: 463 W; (8)Power Dissipation Derating TC > 25℃: 3.7 W/℃; (9)Operating and Storage Junction Temperature Range, TJ, TSTG: -55 to 150℃; (10)Maximum Lead Temperature for Soldering, TL: 260 ℃.

Features

HGTG30N60A4D features: (1)>100kHz Operation At 390V, 30A; (2)200kHz Operation At 390V, 18A; (3)600V Switching SOA Capability; (4)Typical Fall Time: 60ns at TJ = 125℃; (5)Low Conduction Loss.

Diagrams

HGTG30N60A4D block diagram

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