(China (Mainland))
Product Summary
The HAT1020 is a Silicon P Channel Power MOS FET.
Parametrics
HAT1020 absolute maximum ratings: (1)Drain to source voltage VDSS: -30V; (2)Gate to source voltage VGSS: ±20V; (3)Drain current ID: -5A; (4)Drain peak current ID(pulse) Note1: -40A; (5)Body–drain diode reverse drain current IDR: -5A; (6)Channel dissipation Pch Note2: 2.5W; (7)Channel temperature Tch: 150℃; (8)Storage temperature Tstg: –55℃ to +150℃.
Features
HAT1020 features: (1)Low on-resistance; (2)Capable of 4 V gate drive; (3)Low drive current; (4)High density mounting.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 HAT1020R |
Other |
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Data Sheet |
Negotiable |
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HAT1000-S |
Other |
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Data Sheet |
Negotiable |
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HAT1016R |
Other |
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Data Sheet |
Negotiable |
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HAT1020R |
Other |
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Data Sheet |
Negotiable |
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HAT1021R |
Other |
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Data Sheet |
Negotiable |
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HAT1023R |
Other |
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Data Sheet |
Negotiable |
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HAT1024R |
Other |
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Data Sheet |
Negotiable |
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