H11F3

H11F3, photo FET optocoupler, 1A, 100mW, DIP

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Price:: US $0.80~1.00 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
1 ~ 10 :	1.00 / Piece
20 ~ 100 :	0.80 / Piece

PartNumber:: H11F3

Brand:: Fairchild Semiconductor - Fairchild | Pack: DIP | D/C: 07+

Availability:: Supply Ability: 1/Month Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-08-17

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Part Number:H11F3
US $0.80 - 1.00
Quantity:

piece

Product Summary

The H11F3 is a photo FET optocoupler. It consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals. The H11F3 is mounted in dual in-line packages. The applications of the H11F3 include: Isolated variable attenuator, Automatic gain control, Active filter fine tuning/band switching, Isolated sample and hold circuit, Multiplexed, optically isolated A/D conversion.

Parametrics

H11F3 absolute maximum ratings: (1)TSTG Storage Temperature: -55 to +150℃; (2)TOPR Operating Temperature: -40 to +100℃; (3)TSOL Lead Solder Temperature: 260℃ for 10 sec; (4)IF Continuous Forward Current: 60mA; (5)VR Reverse Voltage: 5V; (6)IF(pk) Forward Current – Peak (10 μs pulse, 1% duty cycle): 1A; (7)PD LED Power Dissipation 25℃ Ambient: 100mW, Derate Linearly from 25℃: 1.33mW/℃.

Features

H11F3 features: (1)Extremely low offset voltage; (2)60 Vpk-pk signal capability; (3)No charge injection or latch-up; (4)ton, toff≤15μS; (5)UL recognized (File #E90700).