Product Summary
The FP75R12KT3 is an IGBT-Module.
Parametrics
FP75R12KT3 absolute maximum ratings: (1)Kollektor-Emitter-Sperrspannung collector-emitter voltage: 1200V; (2)Kollektor-Dauergleichstrom DC-collector current: 75A; (3)Gesamt-Verlustleistung: 355W.
Features
FP75R12KT3 features: (1)Gate-Schwellenspannung gate threshold voltage: 5.0 to 6.5V; (2)Gateladung gate charge: 0.70μC; (3)Interner Gatewiderstand internal gate resistor: 10Ω.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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FP75R12KT3 |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 105A |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
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FP750SOT343 |
Other |
Data Sheet |
Negotiable |
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FP75R06KE3 |
Infineon Technologies |
IGBT Modules IGBT-MODULE |
Data Sheet |
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FP75R12KE3 |
Infineon Technologies |
IGBT Modules 1200V 75A PIM |
Data Sheet |
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FP75R12KT3 |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 105A |
Data Sheet |
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FP75R12KT4 |
Infineon Technologies |
Discrete Semiconductor Modules 1.85V IGBT 4 PIM |
Data Sheet |
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FP75R12KT4_B11 |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 75A |
Data Sheet |
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