Product Summary
The FDA59N25 is a 250V N-Channel MOSFET. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The FDA59N25 is well suited for high efficient switched mode power supplies and active power factor correction.
Parametrics
FDA59N25 absolute maximum ratings: (1)Drain-Source Voltage: 250 V; (2)Repetitive Avalanche Voltage: 300 V; (3)Drain Current - Continuous: 59 or 35A; (4)Drain Current - Pulsed: 236 A; (5)Gate-Source voltage: ±30 V; (6)Single Pulsed Avalanche Energy: 1458 mJ; (7)Avalanche Current: 59 A; (8)Repetitive Avalanche Energy: 39.2 mJ; (9)Peak Diode Recovery dv/dt: 4.5 V/ns; (10)Operating and Storage Temperature Range: -55 to +150 ℃.
Features
FDA59N25 features: (1)59A, 250V, RDS(on) = 0.049Ω@VGS = 10 V; (2)Low gate charge (typical 63 nC); (3)Low Crss (typical 70 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
FDA59N25 |
Fairchild Semiconductor |
MOSFET 250V N-Ch MOSFET |
Data Sheet |
|
|
|||||||||||||
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
FDA50N50 |
Fairchild Semiconductor |
MOSFET 500V NCH MOSFET |
Data Sheet |
|
|
|||||||||||||
FDA59N25 |
Fairchild Semiconductor |
MOSFET 250V N-Ch MOSFET |
Data Sheet |
|
|
|||||||||||||
FDA59N30 |
Fairchild Semiconductor |
MOSFET 500V NCH MOSFET |
Data Sheet |
|
|