(China (Mainland))
Product Summary
The em639165ts-6g is a high-speed CMOS synchronous DRAM containing 128 Mbits. The em639165ts-6g is internally configured as 4 Banks of 2M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK) . Read and write accesses to the em639165ts-6g is burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. The em639165ts-6g provides for programmable Read or Write burst lengths of 1, 2, 4, 8, or full page, with a burst termination option.
Parametrics
em639165ts-6g absolute maximum ratings: (1) Input, Output Voltage VIN, VOUT: -1 to 4.6V; (2) Power Supply Voltage VDD, VDDQ: -1 to 4.6V; (3) Operating Temperature TA: 0 to 70°C; (4) Storage Temperature TSTG: -55 to 125°C; (5) Soldering Temperature (10 second) TSOLDER: 260°C; (6) Power Dissipation PD: 1W; (7) Short Circuit Output Current IOUT: 50mA.
Features
em639165ts-6g features: (1) Fast access time from clock: 5/5.4 ns; (2) Fast clock rate: 166/143 MHz; (3) Fully synchronous operation; (4) Internal pipelined architecture; (5) 2M word x 16-bit x 4-bank; (6) Programmable Mode registers; (7) Auto Refresh and Self Refresh; (8) 4096 refresh cycles/64ms; (8) CKE power down mode; (9) Single +3.3V power supply ; (10) Interface: LVTTL; (11) 54-pin 400 mil plastic TSOP II package; (12) Lead-free package is available.
Diagrams
