(China (Mainland))
Product Summary
The D45128163G5-A75-9JF-E is a high-speed 134,217,728-bit synchronous dynamic random-access memory. The D45128163G5-A75-9JF-E achieved high-speed data transfer using the pipeline architecture. All inputs and outputs are synchronized with the positive edge of the clock. The D45128163G5-A75-9JF-E is compatible with Low Voltage TTL (LVTTL). These products are packaged in 54-pin TSOP (II).
Parametrics
D45128163G5-A75-9JF-E absolute maximum ratings: (1)Voltage on power supply pin relative to GND VCC, VCCQ: -0.5 to +4.6 V; (2)Voltage on any pin relative to GND VT: -0.5 to +4.6 V; (3)Short circuit output current IO: 50 mA; (4)Power dissipation PD: 1 W; (5)Operating ambient temperature TA: 0 to 70 °C; (6)Storage temperature Tstg: -55 to + 125 °C.
Features
D45128163G5-A75-9JF-E features: (1)Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge; (2)Pulsed interface; (3)Possible to assert random column address in every cycle; (4)Quad internal banks controlled by BA0(A13)and BA1(A12); (5)Byte control (´16)by LDQM and UDQM; (6)Programmable Wrap sequence (Sequential / Interleave); (7)Programmable burst length (1, 2, 4, 8 and full page); (8)Programmable /CAS latency (2 and 3); (9)Automatic precharge and controlled precharge; (10)CBR (Auto)refresh and self refresh; (11)Single 3.3 V ± 0.3 V power supply; (12)LVTTL compatible inputs and outputs; (13)4,096 refresh cycles / 64 ms; (14)Burst termination by Burst stop command and Precharge command.
Diagrams
