Product Summary

The CA1212 is a RF amplifier. The CA1212 is discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. The CA1212 design uses 2 GaAs FET transistors In parallel, and displays impressive performance characteristics over a broadband frequency range. An RF choke is used for DC power supply decoupling. Both TO-8 and surface mount packages are hermetically sealed, and MIL-STD-883 environmental screening is available.

Parametrics

CA1212 absolute maximum ratings: (1)Storage temperature: -62ºC to +125ºC; (2)Case temperature: +125ºC; (3)DC voltage: +8 V; (4)Continuous input power: +13 dBm; (5)Short term input power (1 minute max.): 50 mW; (6)Peak power (3 μsec max.): 0.5 W; (7)“S” series burn-in temperature (case): +125ºC.

Features

CA1212 features: (1)Very low noise: 1.8 dB (TYP.); (2)High output power: +19 dBm (TYP.); (3)High power added efficiency: 20%.

Diagrams

CA1212 pin connection