(China (Mainland))
Product Summary
The BUV11 is a NPN Silicon Power Transistor.
Parametrics
BUV11 absolute maximum ratings: (1)Collector-Emitter Voltage: 200VDC; (2)Collector-Base Voltage: 250VDC; (3)Emitter-Base Voltage: 7VDC; (4)Base-Current continuous: 25ADC; (5)Total Power Dissipation @ TC=25℃: 150W; (6)Operating and Storage Junction Temperature Range: -65 to 200℃.
Features
BUV11 features: (1)High DC current gain; hFE min. = 20 at IC = 6 A; (2)Low VCE(sat), VCE(sat) max. = 0.6 V at IC = 6 A.
Diagrams
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 BUV11 |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
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BUV11 |
Other |
|
Data Sheet |
Negotiable |
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