Product Summary
The BTS141 is a smart lowside power switch. The BTS141 N channel vertical power FET in Smart SIPMOS chip on chip technology. The BTS141 is fully protected by embedded protected functions.
Parametrics
BTS141 absolute maximum ratings: (1)Drain source voltage VDS: 60 V; (2)Drain source voltage for short circuit protection VDS(SC): 32; (3)Continuous input current: -0.2V ≤ VIN ≤ 10V; VIN < -0.2V or VIN > 10V; (4)Operating temperature Tj: - 40 to +150 ℃; (5)Storage temperature Tstg: - 55 to +150; (6)Power dissipation TC = 25 ℃ Ptot: 149 W; (7)Unclamped single pulse inductive energy ID(ISO) = 12 A EAS: 4000 mJ.
Features
BTS141 features: (1)Logic Level Input; (2)Input Protection (ESD); (3)Thermal shutdown with latch; (4)Overload protection; (5)Short circuit protection; (6)Overvoltage protection; (7)Current limitation; (8)Status feedback with external input resistor; (9)Analog driving possible.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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BTS141 |
Infineon Technologies |
Power Switch ICs - POE / LAN SMART LOW SIDE PWR SWITCH |
Data Sheet |
Negotiable |
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BTS141 E3045A |
Infineon Technologies |
Power Switch ICs - POE / LAN Smart Low Side 1 Ch 60 V 149 W |
Data Sheet |
Negotiable |
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BTS141 E3064 |
Infineon Technologies |
Power Switch ICs - POE / LAN HITFET Smart Lowside Pwr SW 60V |
Data Sheet |
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BTS141TC |
Infineon Technologies |
Power Switch ICs - POE / LAN HITFET |
Data Sheet |
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BTS141XT |
Infineon Technologies |
Power Switch ICs - POE / LAN HITFET SMART LOWSIDE POWER SWITCH 60V |
Data Sheet |
Negotiable |
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