Product Summary
The BSM111AR is a SIMOPAC Module.
Parametrics
BSM111AR absolute maximum ratings: (1)Drain-source voltage, VDS: 100 V; (2)Drain-gate voltage, RGS = 20 kW, VDGR: 100V; (3)Gate-source voltage, VGS: ± 20V; (4)Continuous drain current, TC = 25℃, ID: 200 A; (5)Pulsed drain current, TC = 25℃, ID puls: 600A; (6)Operating and storage temperature range Tj, Tstg: –55 to +150℃; (7)Power dissipation, TC = 25℃, Ptot: 700 W; (8)Thermal resistance Chip-case, Rth JC: ≤ 0.18K/W; (9)Insulation test voltage, t = 1 min. Vis: 2500 Vac; (10)Creepage distance, drain-source: 16 mm; (11)Clearance, drain-source: 11mm.
Features
BSM111AR features: (1)VDS = 100 V; (2)I D = 200 A; (3)R DS(on) = 8.5 mW; (4)Power module; (5)Single switch; (6)N channel; (7)Enhancement mode; (8)Package with insulated metal base plate; (9)Package outline/Circuit diagram: 1.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
BSM111AR |
Other |
Data Sheet |
Negotiable |
|
||||||||||||||
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
BSM100GAL120DLCK |
Infineon Technologies |
IGBT Modules 1200V 100A CHOPPER |
Data Sheet |
|
|
|||||||||||||
BSM100GAL120DN2 |
Infineon Technologies |
IGBT Modules 1200V 100A CHOPPER |
Data Sheet |
Negotiable |
|
|||||||||||||
BSM100GAR120DN2 |
Infineon Technologies |
IGBT Transistors 1200V 100A DUAL |
Data Sheet |
Negotiable |
|
|||||||||||||
BSM100GB120DLC |
Infineon Technologies |
IGBT Modules 1200V 100A DUAL |
Data Sheet |
|
|
|||||||||||||
BSM100GB120DLCK |
Infineon Technologies |
IGBT Modules 1200V 100A DUAL |
Data Sheet |
|
|
|||||||||||||
BSM100GB120DN2 |
Infineon Technologies |
IGBT Modules 1200V 100A DUAL |
Data Sheet |
|
|