(China (Mainland))
Product Summary
The BD536 is a silicon epitaxial-base NPN power transistor in Jedec TO-220 plastic package, intented for use in medium power linear and switching applications. The complementary PNP type is BD536 respectively.
Parametrics
BD536 absolute maximum ratings: (1)Collector-base voltage (IE = 0): 60 V; (2)Collector-emit ter voltage (VBE = 0): 60 V; (3)Collector-emit ter voltage (IB = 0): 60 V; (4)Emitter-base voltage (IC = 0): 5 V; (5)Collector and emit ter current: 8 A; (6)Base current: 1 A; (7)Total dissipation at Tc ≤ 25 ℃: 50 W; (8)Storage temperature: -65 to 150 ℃; (9)Max. Operating junction temperature: 150 ℃.
Features
BD536 features: (1)22000 counts, adjustable; (2)Input signal full scalc = 220 mV (sensitivity = 10 uV/count); (3)Conversion rate sclcctablc; (4)On chip buzzer driving, frcqucncy sclcctablc; (5)Low battery dctcction; (6)Zero calibration for eliminating offset error; (7)Using 5V or 3V microprocessor; (8)I/O port with microprocessor (3 pins); (9)Two formats for data acquisition; (10)single 5V or 6V DC power supply (V+ to V-); (11)28 pin SOP packagc.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 BD536J |
Fairchild Semiconductor |
Transistors Bipolar (BJT) PNP Epitaxial Sil |
Data Sheet |
Negotiable |
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 |
BD5360G-TR |
ROHM Semiconductor |
Voltage Detectors / Monitors CMOS DETEC VOLT 6.0V |
Data Sheet |
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 |
BD5360G |
Other |
|
Data Sheet |
Negotiable |
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 |
BD5360FVE-TR |
ROHM Semiconductor |
Voltage Detectors / Monitors CMOS DETEC VOLT 6.0V |
Data Sheet |
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|
BD5360 |
Other |
|
Data Sheet |
Negotiable |
|
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 |
BD536 |
STMicroelectronics |
Transistors Bipolar (BJT) NPN Medium Power |
Data Sheet |
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