(China (Mainland))
Product Summary
The APT6030BVFR is a new generation of high voltage N-Channel enhancement mode power MOSFET. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. The APT6030BVFR also achieves faster switching speeds through optimized gate layout.
Parametrics
APT6030BVFR absolute maximum ratings: (1)Drain-Source Voltage, VDSS: 600V; (2)Continuous Drain Current @ TC = 25℃, ID: 21A; (3)Pulsed Drain Current, IDM: 84A; (4)Gate-Source Voltage Continuous, VGS: ±30V; (5)Gate-Source Voltage Transient, VGSM: ±40V; (6)Total Power Dissipation @ TC = 25℃, PD: 300W; (7)Linear Derating Factor, PD: 2.4W/℃; (8)Operating and Storage Junction Temperature Range, TJ,TSTG: -55 to 150℃; (9)Lead Temperature: 0.063" from Case for 10 Sec., TL: 300℃; (10)Avalanche Current(Repetitive and Non-Repetitive), IAR: 21A; (11)Repetitive Avalanche Energy, EAR: 30mJ; (12)Single Pulse Avalanche Energy, EAS: 1300mJ.
Features
APT6030BVFR features: (1)Fast Recovery Body Diode; (2)100% Avalanche Tested; (3)Lower Leakage; (4)Popular TO-247 Package; (5)Faster Switching.
Diagrams
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 APT6030BVFR |
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Data Sheet |
Negotiable |
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APT6030BVFRG |
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MOSFET N-CH 600V 21A TO-247 |
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